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US 9,865,620 B2Granted
Semiconductor device having semiconductor layer that includes channel region formed into concave shape, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorMasashi Nakagawa
Life of this patent
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Abstract
A first insulation layer includes a concave portion. A semiconductor layer includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer. A gate insulation layer covers the channel area. A gate electrode is disposed to be opposed to the channel area via the gate insulation layer. A first electrode is one of a source electrode and a drain electrode. A second electrode is the other of the source electrode and the drain electrode.
Claims11
A semiconductor device comprising:
- a semiconductor layer which includes a source region, a drain region, and a channel region and is disposed above a first insulation layer;
- a gate insulation layer which covers the channel region;
- and
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer,
- wherein the channel region of the semiconductor layer is formed into a concave shape.
2 more elements
An electro-optical device comprising:
- a semiconductor device comprising:
- a semiconductor layer which includes a source region, a drain region, and a channel region and is disposed above a first insulation layer, the channel region of the semiconductor layer is formed into a concave shape;
- a gate insulation layer which covers the channel region of the semiconductor layer;
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer;
- a first electrode which is one of a source electrode and a drain electrode;
- and
- a second electrode which is the other of the source electrode and the drain electrode,
- a base;
- a scan line;
- and
- a data line which is arranged so as to intersect the scan line,
- wherein the semiconductor device is electrically connected to the scan line and the data line, and the scan line is arranged between the base and the semiconductor device.
9 more elements
An electro-optical device comprising:
- an element substrate which includes a semiconductor device and a pixel electrode electrically connected to the semiconductor device, the semiconductor device comprising:
- a semiconductor layer which includes a source region, a drain region, and a channel region and is disposed above a first insulation layer, the channel region of the semiconductor layer is formed into a concave shape;
- a gate insulation layer which covers the channel region of the semiconductor layer;
- and
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer;
- an opposing substrate which is opposed to the element substrate;
- and
- an electro-optical layer which is interposed between the element substrate and the opposing substrate.
5 more elements
Dependencies are inferred from the claim text.