Semiconductor memory device and method for manufacturing same
AssigneeToshiba Memory Corporation
InventorsTakashi Shimizu, Hisataka Meguro, Shinya Takahashi, Ryota Katsumata
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device according to one embodiment includes a stacked body, a semiconductor pillar and a plurality of charge storage films. The stacked body includes a plurality of electrode films and air gaps. The plurality of electrode films are disposed to be separated from each other along a first direction. Each of the air gaps is made between the electrode films. The semiconductor pillar extends in the first direction and pierces the stacked body. The plurality of charge storage films are provided between the semiconductor pillar and the plurality of electrode films. The plurality of charge storage films are partitioned every electrode film.
Claims15
A semiconductor memory device, comprising:
- a stacked body including a plurality of electrode films and air gaps, the plurality of electrode films being disposed to be separated from each other along a first direction, each of the air gaps being made between the electrode films;
- a semiconductor pillar extending in the first direction and piercing the stacked body;
- a plurality of charge storage films provided between the semiconductor pillar and the plurality of electrode films, the plurality of charge storage films being partitioned every electrode film;
- a substrate disposed on the first-direction side of the stacked body;
- a plurality of conductive members piercing the stacked body and being connected to the substrate;
- a plurality of capping films disposed between the conductive member and the plurality of electrode films;
- and
- an insulating film disposed between the charge storage films, between the electrode films, between the capping films, and between the capping film and the conductive member, the insulating film being formed of an insulating material different from a material of the capping film,
- the air gaps being made inside the insulating film.
A semiconductor memory device, comprising:
- a stacked body including a plurality of electrode films and air gaps, the plurality of electrode films being disposed to be separated from each other along a first direction, each of the air gaps being made between the electrode films;
- a semiconductor pillar extending in the first direction and piercing the stacked body;
- a charge storage film provided between the semiconductor pillar and the electrode films;
- and
- a plurality of capping films disposed to be separated from each other along the first direction,
- the electrode films being disposed respectively between the charge storage film and the capping films.
Dependencies are inferred from the claim text.