Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
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Abstract
A semiconductor device includes bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first direction, a plurality of channel layers disposed under the bit lines, the plurality of channel layers extending in a third direction perpendicular to a plane extending along the first and second directions and spaced apart along the second direction, so that each channel layer is at least partially overlapped with at least two of the bit lines, and a contact plug extending, from the channel layer, toward one of the bit lines overlapped with the channel layer.
Claims7
A semiconductor device comprising:
- bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first direction;
- a plurality of channel layers disposed under the bit lines, the plurality of channel layers extending in a third direction perpendicular to a plane extending along the first and second directions and spaced apart along the second direction, so that each channel layer is at least partially overlapped with at least two of the bit lines;
- and
- a contact plug extending, from one of the channel layers, toward one of the bit lines,
- wherein the contact plug includes a first portion being contacted with an inner wall of one of the channel layers and being surrounded by one of the channel layers:
- and
- a second portion extending from the first portion to be contacted with one of the bit lines.
Dependencies are inferred from the claim text.