Method of making a fully depleted semiconductor-on-insulator programmable cell and structure thereof

A programmable cell, comprising:

• a fully depleted semiconductor-on-insulator substrate comprising a semiconductor layer, the semiconductor layer comprising a first doped source/drain region, a second doped source/drain region and a region comprising germanium, wherein the region comprising germanium comprises silicon germanium region, wherein the silicon germanium region is 20 to 30 percent germanium;
• a program gate disposed above the region comprising germanium and comprising a gate dielectric layer disposed below a gate conductor;
• and
• a word line gate disposed between the first doped source/drain region and the second source/drain region.

A method of manufacturing a programmable cell, the method comprising:

• providing a fully depleted semiconductor-on-insulator substrate comprising a semiconductor layer, the semiconductor layer comprising a first doped source/drain region, a second doped source/drain region and a region comprising germanium;
• providing a bit line, wherein the first doped source/drain region is coupled to the bit line and the second doped source/drain region is adjacent the region comprising germanium;
• providing a word line gate between the first doped source/drain region and the second source/drain region;
• and
• providing a program gate above the region comprising germanium and comprising a gate dielectric layer disposed below a gate conductor.

A one-time programmable device, comprising:

• a semiconductor-on-insulator substrate;
• a first cell disposed on the semiconductor-on-insulator substrate and comprising a first gate disposed between a first doped source/drain region and a second doped source/drain region;
• a second cell disposed on the semiconductor-on-insulator substrate and comprising a second gate disposed between a third doped source/drain region and a fourth doped source/drain region;
• and
• a doped isolation region disposed between the second source/drain region and the fourth source/drain region, the doped isolation region being heavily doped with N type dopants and the second doped source/drain region and the fourth doped source/drain region being heavily doped with P type dopants.