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US 9,865,603 B2Granted
Transistor structure having N-type and P-type elongated regions intersecting under common gate
AssigneeGlobalfoundries Inc.
InventorsHui Zang, Min-hwa Chi
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Abstract
A semiconductor structure includes a semiconductor substrate, at least one first elongated region of n-type or p-type, and at least one other second elongated region of the other of n-type or p-type, the first and second elongated regions crossing such that the first elongated region and the second elongated region intersect at a common area, and a shared gate structure over each common area.
Claims8
A semiconductor structure, comprising:
- a semiconductor substrate;
- at least one elongated region of one of p-type and n-type;
- at least one other elongated region of the other of p-type and n-type;
- a common area comprising an intersection of the at least one elongated region and the at least one other elongated region;
- and
- a shared gate structure over the common area, wherein an added impurities level of corresponding elongated regions is less, but non-zero, throughout the common area than outside the common area.
3 more elements
Dependencies are inferred from the claim text.