Ion implantation with charge and direction control

An electron emission element comprising:

• an electron emitter including an electron emission gap disposed between a gate electrode and a cathode electrode;
• a first conductive feature enclosing a first open central region, wherein the first conductive feature is disposed above the electron emission gap;
• and
• a second conductive feature disposed above the first conductive feature opposite the electron emitter, wherein the second conductive feature includes a plurality of electrically independent conductors enclosing a second open central region.

An emitting device comprising:

• a gate electrode and a cathode electrode disposed such that a gap exists between the gate electrode and the cathode electrode, and wherein a side surface of the gate electrode closest to the cathode electrode is substantially parallel to a side surface of the cathode electrode closest to the gate electrode;
• an anode ring disposed above the gap between the gate electrode and the cathode electrode such that an electron emitted within the gap passes through an open portion of the anode ring;
• and
• a conductive structure disposed above the anode ring opposite the gate electrode and the cathode electrode and aligned such that an open portion of the conductive structure is over the entire anode ring.