Memory driving circuit

A memory driving circuit, comprising:

• a programmable current source, configured to generate a first current and a second current, wherein the second current drives a memory cell and produces a device voltage at a current input terminal of the memory cell, wherein the second current is proportional to the first current;
• a reference voltage generation unit comprising a reference voltage terminal and configured to output a crystal voltage;
• and
• a voltage comparator unit, comprising a first voltage input terminal, a second voltage input terminal, and a comparison output terminal, wherein the reference voltage terminal is connected to the first voltage input terminal, the current input terminal of the memory cell is connected to the second voltage input terminal, and the comparison output terminal is directly connected to the programmable current source;
• wherein the voltage comparator unit compares the device voltage with the crystal voltage and sends out a first control signal, via the comparison output terminal, to control the programmable current source in order to adjust the magnitude of the first current and the second current.