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US 9,864,138 B2Granted
Integrated photonics including germanium
AssigneeThe Research Foundation for The State University of New York
InventorsDouglas Coolbaugh, Thomas Adam, Gerald L. Leake
Life of this patent
Estimating the term…
Abstract
A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
Claims36
A method of fabricating a photodetector structure comprising:
- forming dielectric material over silicon;
- etching a trench in the dielectric material extending to the silicon;
- epitaxially growing germanium within the trench;
- annealing germanium formed by the epitaxially growing;
- repeating the epitaxially growing and the annealing until the germanium overfills the trench;
- planarizing an overfill portion of the germanium;
- and
- creating top and bottom contacts using doping and metallization, wherein the method is performed so that the top contact is in contact with the germanium, wherein the method includes forming a reduced area top doping region in the germanium having an area smaller than an area of a top of the germanium in which the top doping region is formed, and wherein the method is performed so that an entirety of a perimeter of the top doping region is spaced apart inward from a perimeter of the germanium defined at a top of the germanium.
5 more elements
A method of fabricating a photodetector structure comprising:
- forming dielectric material over silicon;
- etching a trench in the dielectric material extending to the silicon;
- epitaxially growing germanium within the trench;
- annealing germanium formed by the epitaxially growing;
- repeating the epitaxially growing and the annealing until the germanium overfills the trench;
- planarizing an overfill portion of the germanium;
- and
- creating top and bottom contacts using doping and metallization, wherein the epitaxially growing includes performing the epitaxial growing so that initially deposited germanium formed on the silicon is epitaxially grown at a temperature in the range of from about 550 degrees Celsius to about 850 degrees Celsius.
5 more elements
A method of fabricating a photodetector structure comprising:
- forming dielectric material over silicon;
- etching a trench in the dielectric material extending to the silicon;
- epitaxially growing germanium within the trench;
- annealing germanium formed by the epitaxially growing;
- repeating the epitaxially growing and the annealing until the germanium overfills the trench;
- planarizing an overfill portion of the germanium;
- and
- creating top and bottom contacts using doping and metallization, wherein the method is performed so that the silicon includes a silicon portion delimiting the trench, and wherein the method is performed so that the top contact is in contact with the germanium at a location that includes an area in alignment with the silicon portion delimiting the trench.
5 more elements
A method of fabricating a photodetector structure comprising:
- forming dielectric material over silicon;
- etching a trench in the dielectric material extending to the silicon;
- epitaxially growing germanium within the trench;
- annealing germanium formed by the epitaxially growing;
- repeating the epitaxially growing and the annealing until the germanium overfills the trench;
- planarizing an overfill portion of the germanium;
- and
- creating top and bottom contacts using doping and metallization, wherein the method includes forming a top doping region in the germanium and wherein the method is performed so that an entirety of a perimeter of the top doping region is spaced apart inward from a perimeter of the germanium defined at a top of the germanium and wherein the method is performed so that the top contact is in contact with the top doping region of the germanium and further so that an entirety of a perimeter of the top contact at a location contacting the top doping region of the germanium is spaced apart inward from the perimeter of the top doping region.
5 more elements
A method of fabricating a photodetector structure comprising:
- forming dielectric material over silicon;
- etching a trench in the dielectric material extending to the silicon;
- epitaxially growing germanium within the trench;
- annealing germanium formed by the epitaxially growing;
- repeating the epitaxially growing and the annealing until the germanium overfills the trench;
- planarizing an overfill portion of the germanium;
- and
- creating top and bottom contacts using doping and metallization, wherein the epitaxially growing includes performing epitaxial growing at a temperature in the range of from about 550 degrees Celsius to about 850 degrees Celsius at a pressure in the range of from about 10 Torr to about 300 Torr using germane (GeH4) and H2 as a precursor and carrier gas, and wherein the annealing includes annealing at a temperature of between about 650 degrees Celsius to about 850 degrees Celsius at a pressure of between about 100 Torr to about 600 Torr.
5 more elements
Dependencies are inferred from the claim text.