Photoelectric conversion device and fabrication method thereof

A method for fabricating a photoelectric conversion device comprising the successive steps of:

• forming a first silicon semiconductor layer containing an impurity imparting one conductivity type over a substrate;
• forming an amorphous silicon film as a second silicon semiconductor layer over the first silicon semiconductor layer;
• adding selectively a catalyst material which promotes crystallization of silicon to a first region of the second silicon semiconductor layer;
• crystallizing the first region of the second silicon semiconductor layer by a heat treatment performed for the second silicon semiconductor layer;
• forming a film containing phosphorus or a rare gas over the second silicon semiconductor layer;
• performing a heat treatment for the second silicon semiconductor layer and the film containing the phosphorus or the rare gas;
• removing the film containing the phosphorus or the rare gas;
• forming a third silicon semiconductor layer which contains an impurity imparting a conductivity type opposite to the one conductivity type over the second silicon semiconductor layer;
• and
• dividing a stacked layer comprising the first, the second, and the third silicon semiconductor layers at a second region to which the catalyst material is not added.

A method for fabricating a photoelectric conversion device comprising the successive steps of:

• forming a first silicon semiconductor layer containing an impurity imparting one conductivity type over a substrate;
• forming an amorphous silicon film as a second silicon semiconductor layer over the first silicon semiconductor layer;
• adding selectively a catalyst material which promotes crystallization of silicon to a plurality of first regions of the second silicon semiconductor layer;
• crystallizing the plurality of first regions of the second silicon semiconductor layer by a heat treatment performed for the second silicon semiconductor layer;
• forming a film containing phosphorus or a rare gas over the second silicon semiconductor layer;
• performing a heat treatment for the second silicon semiconductor layer and the film containing the phosphorus or the rare gas;
• removing the film containing the phosphorus or the rare gas;
• forming a third silicon semiconductor layer which contains an impurity imparting a conductivity type opposite to the one conductivity type over the second silicon semiconductor layer;
• and
• dividing a stacked layer comprising the first, the second, and the third silicon semiconductor layers at a second region to which the catalyst material is not added.