Semiconductor structure and a manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen
Life of this patent
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Abstract
A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface and a recess extending from the first surface towards the second surface, a first die at least partially disposed within the recess and including a first die substrate and a first bonding member disposed over the first die substrate, a second die disposed over the first die and including a second die substrate and a second bonding member disposed a second die substrate and the second die substrate, a redistribution layer (RDL) disposed over the second die, and a conductive bump disposed over the RDL, wherein the first bonding member is disposed opposite to and is bonded with the second bonding member.
Claims20
A semiconductor structure, comprising:
- a substrate including a first surface, a second surface opposite to the first surface and a recess extending from the first surface towards the second surface;
- a first die at least partially disposed within the recess and including a first front surface, a first die substrate and a first bonding member disposed over the first front surface;
- a second die disposed over the first die and including a second front surface, a second die substrate and a second bonding member disposed over the second front surface;
- a redistribution layer (RDL) disposed over the second die;
- and
- a conductive bump disposed over the RDL,
- wherein the first bonding member is disposed opposite to and is bonded with the second bonding member, and the first front surface of the first die is interfaced with the second front surface of the second die.
A semiconductor structure, comprising:
- a substrate including a recess extending into the substrate;
- a first die surrounded by the recess, and including a first front surface, a first back surface opposite to the first front surface and interfaced with a bottom sidewall of the recess, and a first bonding member disposed over the first front surface;
- a second die disposed over the first die, and including a second front surface interfaced with the first front surface, a second back surface opposite to the second front surface and a second bonding member disposed over the second front surface;
- and
- a dielectric material disposed within the recess and surrounding the first die and the second die,
- wherein the first bonding member is interfaced with the second bonding member.
A method of manufacturing a semiconductor structure, comprising:
- receiving a substrate;
- forming a recess extending into the substrate;
- disposing a first die at least partially within the recess and including a first front surface;
- disposing a first dielectric material over the substrate and within the recess to surround the first die;
- disposing a second die over the first die and including a second front surface interfaced with the first front surface;
- disposing a second dielectric material over the first dielectric material to surround the second die,
- wherein the first die includes a first bonding member surrounded by the first dielectric material, the second die includes a second bonding member disposed opposite to the first bonding member and surrounded by the second dielectric material, the first bonding member is bonded with the second bonding member.
Dependencies are inferred from the claim text.