Silicon-containing photoresist for lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Yen Lin, Ching-Yu Chang
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Abstract
A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.
Claims20
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit chemically bonded to a crosslinker;
- performing an exposing process to the photoresist layer;
- and
- developing the photoresist layer to remove portions of the photoresist layer that are not exposed by the exposing process, thereby forming a patterned photoresist layer.
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer backbone, a first silicon-containing unit chemically bonded to the polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a second silicon-containing unit chemically bonded to a crosslinker, wherein the crosslinker is bondable to the polymer backbone if the ALG is cleaved off thereof;
- performing an exposing process to the photoresist layer, resulting in the ALG being cleaved off of the polymer backbone and the crosslinker bonding to the polymer backbone;
- and
- developing the photoresist layer to remove portions of the photoresist layer that are not exposed by the exposing process, thereby forming a patterned photoresist layer.
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer backbone, a first silicon-containing unit chemically bonded to the polymer backbone, a polar unit chemically bonded to the polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a second silicon-containing unit chemically bonded to a crosslinker;
- performing an exposing process to the photoresist layer;
- and
- developing the photoresist layer, thereby forming a patterned photoresist layer,
- wherein the polar unit comprises hydroxyl adamantine, norbornane lactone, γ-butyrolactone, or derivatives thereof.
Dependencies are inferred from the claim text.