Semiconductor apparatus

A semiconductor apparatus comprising:

• an internal circuit connected to a first power line to which a first power voltage is applied;
• a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied;
• and
• a voltage control circuit, which is connected to the node, configured to generate the control voltage,
• wherein the voltage control circuit includes:
• a step-down circuit configured to generate an internal voltage by lowering the input voltage applied to the node, and
• a switching circuit, which is connected to the first power line, configured to generate the control voltage based on the first power voltage and being based on the internal voltage,
• wherein the switching circuit includes:
• a first diode having an anode to which the internal voltage is applied,
• a capacitor having a first terminal connected to a cathode of the first diode and a second terminal connected to a second power line to which a second power voltage is applied,
• a p-channel MOS transistor having a first terminal connected to the first terminal of the capacitor and a control terminal connected to the first power line, and
• a second diode having an anode connected to the first power line and a cathode connected to a second terminal of the p-channel MOS transistor, and
• wherein the cathode of the second diode outputs the control voltage.

A semiconductor apparatus comprising:

• an internal circuit connected to a first power line to which a first power voltage is applied;
• a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied;
• and
• a voltage control circuit, which is connected to the node, configured to generate the control voltage,
• wherein the voltage control circuit includes:
• a step-down circuit configured to generate an internal voltage by lowering the input voltage applied to the node,
• a switching circuit, which is connected to the first power line, configured to generate the control voltage based on the first power voltage and the internal voltage, and
• a protection circuit connected to the node;
• and
• wherein the protection circuit includes:
• a first transistor having a first terminal connected to the node and a control terminal to which the control voltage is applied,
• a second transistor having a first terminal connected to a second terminal of the first transistor, a second terminal connected to the first power line, and a control terminal to which the input voltage is applied, and
• a third transistor having a control terminal connected to the second terminal and a back gate terminal of the first transistor and the first terminal and a back gate terminal of the second transistor, a first terminal connected to the node, a second terminal connected to the first power line, and a back gate terminal connected to the second terminal of the first transistor.