Resistance switching memory device and method of manufacturing the same

A resistance switching memory device, comprising:

• an insulating layer having a top surface;
• a convex bottom electrode, embedded in the insulating layer and protruding from the top surface of the insulating layer;
• spacers, surrounding lateral sidewalls of an upper portion of the convex bottom electrode;
• a barrier layer, embedded in the insulating layer for separating the insulating layer and the convex bottom electrode, and the barrier layer comprising a first barrier layer having a first barrier thickness, and a second barrier layer formed above the first barrier layer and having a second barrier thickness, wherein the second barrier thickness is smaller than the first barrier thickness;
• a resistance switching layer, disposed on the convex bottom electrode;
• and
• a top electrode, formed on the resistance switching layer and covering the resistance switching layer and the spacers.

A method of manufacturing a resistance switching memory device, comprising:

• providing an insulating layer having a hole;
• forming a bottom electrode for filling up the hole of the insulating layer, wherein an upper portion of the bottom electrode protrudes from the insulating layer, and the upper portion has round corners at edges;
• disposing a resistance switching layer on the bottom electrode, comprising:
• forming an oxide layer on the insulating layer and the bottom electrode;
• and subjecting the oxide layer to an oxygen plasma etching process anisotropically, wherein spacers are formed for surrounding lateral sidewalls of the upper portion of the bottom electrode, and the resistance switching layer with a self-aligned structure is generated simultaneously after the oxygen plasma etching process;
• and
• forming a top electrode on the resistance switching layer and covering the resistance switching layer.