Resistive random access memory device with reduced power consumption
AssigneeNational Sun Yat-Sen University
InventorsTing-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
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AssigneeNational Sun Yat-Sen University
InventorsTing-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
Estimating the term…
A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.
A resistive random access memory device comprising:
Dependencies are inferred from the claim text.