Logic compatible RRAM structure and process

A device comprising:

• a first electrode disposed through an opening in a first dielectric layer;
• a resistive layer disposed on the first electrode, wherein the first electrode and the resistive layer collectively include a first lip region that extends laterally over the first dielectric layer by a first distance beyond a region defined by the opening, wherein the first lip region is at a first height different from a second height of the corresponding first electrode and the resistive layer located in the region defined by the opening;
• a second electrode disposed on the resistive layer;
• and
• a second dielectric layer disposed on the second electrode, wherein the second electrode and the second dielectric layer collectively include a second lip region that extends laterally over the resistive layer by a second distance beyond the region defined by the opening, the second distance being different than the first distance.

A device comprising:

• a first electrode disposed through an opening in a first dielectric layer;
• a resistive layer disposed on the first electrode, wherein the first electrode and the resistive layer collectively include a first lip region that extends laterally over the first dielectric layer by a first distance beyond a region defined by the opening, wherein the first lip region is at a first height different from a second height of the corresponding first electrode and the resistive layer located in the region defined by the opening;
• a second electrode disposed on the resistive layer;
• and
• a second dielectric layer disposed on the second electrode, wherein the second electrode and the second dielectric layer collectively include a second lip region that extends laterally over the resistive layer by a second distance beyond the region defined by the opening, the second distance being different than the first distance, wherein the second lip region is at a third height different from the first height, the second height, and a fourth height of the corresponding second electrode and the second dielectric layer located in the region defined by the opening.