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US 9,853,207 B2Granted
Magnetoresistance effect element
AssigneeCanon Anelva Corporation
InventorsTakuya Seino, Kazumasa Nishimura, Toshikazu Irisawa, Saki Shibuichi
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Abstract
A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.
Claims1
A magnetoresistance effect element comprising:
- a barrier layer;
- a reference layer formed on one surface of the barrier layer;
- a free layer formed on another surface of the barrier layer;
- and
- a pin layer placed on an opposite side of the reference layer from the barrier layer, wherein
- the pin layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.
3 more elements
Dependencies are inferred from the claim text.