Light-emitting diode chip with current spreading layer

A light-emitting diode chip comprising:

• a semiconductor layer sequence comprising a phosphide compound semiconductor material;
• a carrier on which the semiconductor layer sequence is arranged;
• a mirror layer arranged on the carrier for reflecting electromagnetic radiation, generated by the light-emitting diode chip during operation, away from the carrier towards a radiation exit area being opposite the carrier;
• a current spreading layer disposed over the mirror layer and between the semiconductor layer sequence and the mirror layer, the current spreading layer having one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x≦1, so that the current spreading layer spreads the flow of current during the operation of the light-emitting diode chip;
• the semiconductor layer sequence comprises:
• a p-type semiconductor region disposed over the carrier and contacting the current spreading layer,
• an active layer disposed over and contacting the p-type semiconductor region, the active layer being embodied as one of a p-n junction, a double heterostructure, a multiple heterostructure, a single quantum well structure and a multiple quantum well structure and thus configured to emit electromagnetic radiation, and
• an n-type semiconductor region disposed over the p-type semiconductor region and the active layer and contacting the active layer, wherein the n-type semiconductor region faces the radiation exit area of the light-emitting diode chip;
• and
• two isolation trenches disposed in the current spreading layer, wherein the trenches separate the current spreading layer into a central region and edge regions isolated from the central region, and wherein the central region of the current spreading layer is electrically connected to the mirror layer, and wherein the edge regions of the current spreading layer are not directly connected to an electrical contact that is arranged on the central region.

A light-emitting diode chip comprising:

• a semiconductor layer sequence comprising a phosphide compound semiconductor material;
• a carrier on which the semiconductor layer sequence is arranged;
• a mirror layer arranged on the carrier for reflecting electromagnetic radiation, generated by the light-emitting diode chip during operation, away from the carrier towards a radiation exit area being opposite the carrier;
• a current spreading layer disposed over the mirror layer and between the semiconductor layer sequence and the mirror layer, the current spreading layer having one or a plurality of p-doped AlxGa1-xAs layers with 0.5<x≦1, so that the current spreading layer spreads the flow of current during the operation of the light-emitting diode chip;
• wherein the semiconductor layer sequence comprises:
• a p-type semiconductor region disposed over the carrier and contacting the current spreading layer,
• an active layer disposed over and contacting the p-type semiconductor region, the active layer being embodied as one of a p-n junction, a double heterostructure, a multiple heterostructure, a single quantum well structure and a multiple quantum well structure and thus configured to emit electromagnetic radiation, and
• an n-type semiconductor region disposed over the p-type semiconductor region and the active layer and contacting the active layer, wherein the n-type semiconductor region faces the radiation exit area of the light-emitting diode chip;
• and
• a trench disposed in the current spreading layer, wherein the mirror layer extends through the trench into the p-type semiconductor region, wherein the trench separates the current spreading layer into a peripheral region and a central region that is isolated from the peripheral region, and wherein the peripheral region is not directly connected to an electrical contact that is arranged on the central region.