Method for manufacturing nano-structured semiconductor light-emitting element

A core-shell structure semiconductor light emitting device, comprising:

• a base layer including a first conductivity type semiconductor;
• an insulating layer disposed on the base layer and having a plurality of openings through which exposed regions of the base layer are exposed;
• a plurality of light emitting core-shell structures respectively disposed on the exposed regions of the base layer and each of the plurality of light emitting core-shell structures having a core including the first conductivity type semiconductor and having a side surface and an upper surface, and a shell including an active layer and a second conductivity type semiconductor layer sequentially disposed on the side surface of the core;
• and
• a contact electrode on surfaces of the plurality of light emitting core-shell structures and forming ohmic-contact with the second conductivity type semiconductor layer,
• wherein the upper surface of the core is provided as a first upper surface of each of the plurality of light emitting core-shell structures,
• wherein the first upper surface of each of the plurality of light emitting core-shell structures has a recess and a second upper surface of the contact electrode is provided as a bottom surface of the recess.