Method for manufacturing light emitting element and light emitting element

A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and comprises a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, the method comprising:

• forming a buffer layer along the substrate surface having the protrusions;
• allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion and are grown to a height of 900 nm or smaller;
• and
• allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed, wherein
• the buffer layer is formed by sputtering which uses AlN as a target.

A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and comprises a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, the method comprising:

• forming a buffer layer along the substrate surface having the protrusions;
• allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion and are grown to a height of 900 nm or smaller;
• and
• allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed, wherein
• the semiconductor laminated part includes the buffer layer, the crystal nuclei and the planarization layer;
• and
• an oxygen concentration in the crystal nuclei is higher than that of the planarization layer.