Gallium nitride-based light emitting diode

A light emitting diode (LED) comprising:

• a gallium nitride substrate having a growth plane of an m plane;
• a gallium nitride-based first contact layer disposed on the gallium nitride substrate;
• a gallium nitride-based second contact layer disposed at an upper portion of the first contact layer;
• an active layer having a multi-quantum well structure and disposed between the first and second contact layers;
• a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer;
• a middle temperature buffer layer positioned between the substrate and the gallium nitride-based first contact layer,
• a lower GaN layer positioned between the substrate and the gallium nitride-based first contact layer;
• and
• an intermediate layer positioned between the gallium nitride-based first contact layer and the lower GaN layer,
• wherein the intermediate layer is an AlGaN layer,
• wherein the middle temperature buffer layer is grown from the gallium nitride substrate at a growth temperature ranging from 700° C. to 800° C., and
• wherein the gallium nitride substrate and the middle temperature buffer layer are formed of the same material.