Stacked capacitor structure
AssigneeRealtek Semiconductor Corp.
InventorsKai-Yi Huang, Sheng-Hung Lin, Yuh-Sheng Jean, Ta-Hsun Yeh
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Abstract
A stacked capacitor structure includes a MOS varactor and a stacked capacitor. The stacked capacitor is electrically connected to the MOS varactor. The MOS varactor includes a substrate, a gate, a first source/drain and a second source/drain. The substrate has a well, and the gate is positioned over the well. The first source/drain and the second source/drain are formed in the well and positioned at opposing sides of the gate. The stacked capacitor includes a plurality of metal layers. The metal layers are spaced from each other, stacked above the gate, and positioned below an inductive element.
Claims19
A stacked capacitor structure, comprising:
- a MOS (Metal-Oxide-Semiconductor) varactor, comprising:
- a substrate having a well;
- a gate positioned on the well;
- and
- a first source/drain and a second source/drain formed in the well and positioned at opposing sides of the gate;
- a stacked capacitor electrically connected to the MOS varactor, wherein the stacked capacitor comprises a plurality of metal layers spaced from each other, stacked above the gate, and positioned below an inductive element, wherein each first metal layer of the metal layers above the gate serves as a first capacitor electrode, and each second metal layer of the metal layers above the gate serves as a second capacitor electrode, wherein the each first metal layer and the each second metal layer are alternately arranged;
- and
- a first switch having one terminal electrically connected to an anode, and another terminal electrically connected to the second capacitor electrode.
Dependencies are inferred from the claim text.