Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a semiconductor over a substrate;
• forming a first conductor over the semiconductor;
• forming a first insulator over the first conductor;
• forming a resist over the first insulator;
• performing light exposure and development on the resist so that a first region and a second region of the resist remain and a part of the first insulator is exposed;
• applying a bias in a direction perpendicular to a top surface of the substrate and generating plasma using a gas containing carbon and halogen;
• depositing and etching an organic substance with the plasma;
• etching the first insulator using the organic substance, the first region, and the second region as masks to form a second insulator and a third insulator and expose the first conductor;
• etching the first conductor using the second insulator and the third insulator as masks to form a second conductor and a third conductor and expose the semiconductor;
• and
• forming a fourth conductor over the second insulator and the third insulator,
• wherein an etching rate of the organic substance is higher than a deposition rate of the organic substance in the part of the first insulator, and
• wherein the deposition rate of the organic substance is higher than the etching rate of the organic substance in a side surface of the first region.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a semiconductor over a substrate;
• forming a first conductor over the semiconductor;
• forming a first insulator over the first conductor;
• forming a resist over the first insulator;
• performing light exposure and development on the resist so that a first region and a second region of the resist remain and a part of the first insulator is exposed;
• applying a bias in a direction perpendicular to a top surface of the substrate and generating plasma using a gas containing carbon and halogen;
• depositing and etching an organic substance with the plasma;
• etching the first insulator using the organic substance, the first region, and the second region as masks to form a second insulator and a third insulator and expose the first conductor;
• etching the first conductor using the second insulator and the third insulator as masks to form a second conductor and a third conductor and expose the semiconductor;
• and
• forming a fourth conductor over the second insulator and the third insulator,
• wherein an etching rate of the organic substance is higher than a deposition rate of the organic substance in the part of the first insulator.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first conductor over a semiconductor;
• forming a first insulator over the first conductor;
• forming a resist over the first insulator;
• performing light exposure and development on the resist so that a first region and a second region of the resist remain and a part of the first insulator is exposed;
• applying a bias and generating plasma using a gas containing carbon and halogen;
• depositing and etching an organic substance with the plasma;
• etching the first insulator using the organic substance, the first region, and the second region as masks to form a second insulator and a third insulator and expose the first conductor;
• etching the first conductor using the second insulator and the third insulator as masks to form a second conductor and a third conductor and expose the semiconductor;
• forming a fourth conductor over the second insulator and the third insulator,
• wherein an etching rate of the organic substance is higher than a deposition rate of the organic substance in the part of the first insulator.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first conductor over a semiconductor;
• forming a first insulator over the first conductor;
• forming a resist over the first insulator;
• performing light exposure and development on the resist so that a first region and a second region of the resist remain and a part of the first insulator is exposed;
• applying a bias and generating plasma using a gas containing carbon and halogen;
• depositing and etching an organic substance with the plasma;
• etching the first insulator using the organic substance, the first region, and the second region as masks to expose the first conductor;
• and
• forming a fourth conductor over the etched first insulator,
• wherein a deposition rate of the organic substance is higher than an etching rate of the organic substance in a side surface of the first region.