US 9,853,164 B2Granted

Semiconductor device and display device

AssigneeSharp Kabushiki Kaisha

InventorsTakeshi Hara, Hirohiko Nishiki, Izumi Ishida, Shogo Murashige

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Abstract

This semiconductor device is provided with: a semiconductor film that comprises an oxide semiconductor, and includes a channel region; a first inorganic insulating film formed on the semiconductor film; a first organic insulating film formed on the first inorganic insulating film; and an inorganic film group. The inorganic film group has: a first electrode comprising an inorganic conductive film formed on the first organic insulating film; a second inorganic insulating film formed on the first electrode; and a second electrode that comprises an inorganic conductive film formed on the second inorganic insulating film, and is electrically connected to the semiconductor film via openings formed in such a manner as to penetrate the first inorganic insulating film, the first organic insulating film, the first electrode and the second inorganic insulating film. The first organic insulating film is disposed between the first inorganic insulating film and the inorganic film group.

Claims18

Dependent claims

A semiconductor device, comprising:

a semiconductor film made of an oxide semiconductor film and having a channel region;
a drain electrode attached to the semiconductor film at one side of the channel region, the drain electrode being extended in a first direction in a plan view;
a first inorganic insulating film formed on the semiconductor film so as to cover the channel region;
a first organic insulating film formed on the first insulating film and having a portion overlapping the channel region;
and
a group of inorganic films, having:
a first electrode made of an inorganic conductive film and formed on the first organic insulating film so as to have a portion overlapping the channel region,
a second inorganic insulating film formed on the first electrode and having a portion overlapping the channel region;
and
a second electrode made of an inorganic conductive film and formed on the second inorganic insulating film so as to have a portion overlapping the channel region, the second electrode being connected to the drain electrode via a contact hole that penetrates through the first inorganic insulating film, the first organic insulating film, and the second inorganic insulating film in a location that does not overlap the channel region,
wherein the first electrode has a closed-patterned opening in the location that does not overlap the channel region, the closed-patterned opening entirely surrounding and containing therewithin said contact hole in the plan view so that all edges of the contact hole are entirely inside the closed-patterned opening of the first electrode in the plan view,
wherein in the plan view, an edge of the closed-patterned opening of the first electrode traverses an entire width of the drain electrode in a direction that crosses the first direction, and an edge of the drain electrode opposite to the channel region is entirely inside the closed-patterned opening of the first electrode, and
wherein the group of inorganic films and the first inorganic insulating film sandwiches the first organic insulating film.

10 more elements

A semiconductor device, comprising:

a semiconductor film made of an oxide semiconductor film and having a channel region;
a drain electrode attached to the semiconductor film at one side of the channel region, the drain electrode being extended in a first direction in a plan view;
a first inorganic insulating film formed on the semiconductor film so as to cover the channel region;
a first organic insulating film formed on the first inorganic insulating film and having a portion overlapping the channel region;
a first electrode made of an inorganic conductive film and formed on the first organic insulating film so as to have a portion overlapping the channel region,
a second organic insulating film formed on the first electrode and having a portion overlapping the channel region;
and
a second electrode made of an inorganic conductive film and formed on the second organic insulating film so as to have a portion overlapping the channel region, the second electrode being connected to the drain electrode via a contact hole that penetrates through the first inorganic insulating film, the first organic insulating film, and the second organic insulating film in a location that does not overlap the channel region,
wherein the first electrode has a closed-patterned opening in the location that does not overlap the channel region, the closed-patterned opening entirely surrounding and containing therewithin said contact hole in the plan view so that all edges of the contact hole are entirely inside the closed-patterned opening of the first electrode in the plan view, and
wherein in the plan view, an edge of the closed-patterned opening of the first electrode traverses an entire width of the drain electrode in a direction that crosses the first direction, and an edge of the drain electrode opposite to the channel region is entirely inside the closed-patterned opening of the first electrode.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/432,997Filed 30 Sep 2013
Priority: JP 2012-2212403 Oct 2012
Published: US 2015/0303307 A122 Oct 2015
Granted: 26 Dec 2017
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
G02F 1/136286
Active matrix addressed cells: wiring, e.g. gate line, drain line
G02F 1/1368
Active matrix addressed cells: in which the switching element is a three-electrode device
H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…