Thin-film-transistor array substrate, fabricating method thereof, and related display panel
AssigneeBoe Technology Group Co., Ltd.
InventorLei Shi
Life of this patent
Estimating the term…
Abstract
In accordance with some embodiments of the disclosed subject of matter, a TFT array substrate, a method for fabricating the TFT array substrate, and a display panel that comprises the TFT array substrate are provided. In some embodiments, the TFT array substrate comprises: a substrate; an active layer comprising a first region, a source region, a drain region, and a second region between the drain region and the first region; a gate electrode above the first insulating layer, wherein the gate electrode substantially covers the first region; and a first light-shielding layer that overlaps with the first region and substantially covers the second region.
Claims16
A thin-film-transistor array substrate, comprising:
- a substrate;
- an active layer above the substrate comprising a first region, a source region, a drain region, and
- a second region between the drain region and the first region;
- a first insulating layer above the active layer;
- a gate electrode above the first insulating layer, wherein the gate electrode substantially covers the first region;
- and
- a first light-shielding layer that:
- overlaps with a portion of the first region without covering other portions of the first region,
- substantially covers the second region, and
- is insulated from the gate electrode.
A method for fabricating a thin-film-transistor array substrate, the method comprising:
- providing a substrate;
- forming an active layer above the substrate, wherein the active layer comprises a first region, a source region, a drain region, and a second region between the first region and the drain region;
- forming a first insulating layer above the active layer;
- forming a gate electrode above the first insulating layer, wherein the gate electrode substantially covers the first region;
- and
- forming a first light-shielding layer that:
- overlaps with a portion of the first region without covering other portions of the first region,
- substantially covers the second region, and
- is insulated from the gate electrode.
Dependencies are inferred from the claim text.