Semiconductor devices and methods of fabricating the same

A semiconductor device, comprising:

• a substrate including an active region defined by a device isolation layer;
• a fin pattern on the active region and extending in a first direction, the fin pattern comprising a gate fin region and a source/drain fin region;
• a gate pattern provided on the gate fin region to extend in a second direction crossing the first direction;
• and
• a source/drain portion provided on a sidewall of the source/drain fin region,
• wherein when measured in the second direction, a width of source/drain fin region is less than a width of the active region,
• wherein the source/drain fin region is a portion of the substrate.

A semiconductor device, comprising:

• a substrate including an active region defined by a device isolation layer;
• a fin pattern on the active region and extending in a first direction, the fin pattern comprising a gate fin region and a source/drain fin region;
• a gate pattern provided on the gate fin region to extend in a second direction crossing the first direction;
• and
• a source/drain portion provided on a sidewall of the source/drain fin region,
• wherein when measured in the second direction, a width of source/drain fin region is less than a width of the gate fin region, and a top surface of the source/drain fin region is positioned at a lower level than that of the gate fin region,
• wherein a sidewall of the source/drain fin region includes a slanted portion, and
• wherein the source/drain fin region is a portion of the substrate.