Self aligned epitaxial based punch through control
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh
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Abstract
A method of forming a semiconductor device that may include etching source and drain portions of a fin structure of a first semiconductor material selectively to an underlying semiconductor layer of a second semiconductor material, and laterally etching undercut region in the semiconductor layer underlying the fin structure. The method may further include filling the undercut region with a first conductivity type semiconductor material, and forming a second conductivity type semiconductor material for a source region and a drain region on opposing sides of the channel region portion of the fin structure.
Claims20
A method of forming a semiconductor device comprising:
- etching source and drain portions of a fin structure;
- laterally etching undercut region in a semiconductor layer underlying the fin structure;
- forming a first conductivity type semiconductor material in the undercut region;
- and
- forming a second conductivity type semiconductor material for a source region and a drain region.
A method of forming a semiconductor device comprising:
- forming a gate structure on a channel portion of a silicon containing fin structure;
- removing a portion of the silicon containing fin structure extending past said channel portion;
- laterally etching undercut region in a germanium containing layer underlying the silicon containing fin structure;
- forming a first conductivity type semiconductor material in the undercut region;
- and
- forming a second conductivity type semiconductor material for a source region and a drain region.
A semiconductor device comprising:
- a gate structure present on a channel region of a fin structure, wherein the fin structure is composed of a first semiconductor material type and is present atop a semiconductor layer of a second semiconductor material type having a first concentration of a first conductivity type dopant;
- and
- a punch through stop region comprising said second semiconductor material type and having said first conductivity type dopant in a concentration greater than the first conductivity type dopant in the semiconductor layer, wherein said punch through stop region is present in an undercut region extending into the semiconductor material underlying the fin structure.
Dependencies are inferred from the claim text.