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US 9,853,158 B2Granted
Method and structure for multigate FinFet device epi-extension junction control by hydrogen treatment
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita, Chun-chen Yeh
Life of this patent
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Abstract
Embodiments are directed to forming a structure comprising at least one fin, a gate, and a spacer, applying an annealing process to the structure to create a gap between the at least one fin and the spacer, and growing an epitaxial semiconductor layer in the gap between the spacer and the at least one fin.
Claims16
A semiconductor device comprising:
- a plurality of fins disposed in parallel with each other to define respective channel regions;
- a single gate formed to be disposed over the respective channel regions of each of the plurality of the fins;
- a spacer formed to be disposed around and over the single gate and around and over respective outwardly facing sidewalls and respective upwardly facing surfaces of respective portions of each of the plurality of the fins proximate to the single gate;
- and
- an epitaxial layer,
- each of the plurality of the fins being shrunk in:
- side-to-side directions defined along a longitudinal axis of the single gate to create respective gaps between the respective outwardly facing sidewalls of each of the plurality of fins and complementary inwardly facing sidewalls of the spacer, and
- a vertical direction to create respective gaps between the respective upwardly facing surfaces of each of the plurality of fins and complementary downwardly facing surfaces of the spacer, and
- the epitaxial layer being formed in the respective gaps.
6 more elements
A fin field effect transistor (FinFET) comprising:
- a plurality of silicon fins;
- a single gate formed over the fins;
- a spacer formed around and over the gate and around and over respective outwardly facing sidewalls and respective upwardly facing surfaces of respective portions of at least a portion of the fins proximate to the gate;
- and
- an epitaxy layer,
- each of the portion of the fins being shrunk in:
- side-to-side directions defined along a longitudinal axis of the gate to create respective gaps between the respective outwardly facing sidewalls of the portion of the fins and complementary inwardly facing sidewalls of the spacer, and
- a vertical direction to create respective gaps between the respective upwardly facing surfaces of the portion of the fins and complementary downwardly facing surfaces of the spacer, and
- the epitaxy layer being formed in the respective gaps.
6 more elements
Dependencies are inferred from the claim text.