Method of fabricating epitaxial gate dielectrics and semiconductor device of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJean-Pierre Colinge, Ken-Ichi Goto, ZhiQiang Wu
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Abstract
A method of fabricating epitaxial gate dielectric includes forming a SrxBayMzTiO3 gate dielectric on a fin, and 0≦x, y and z≦1, x+y+z=1, and M is calcium or magnesium. One of x and y is not 0. The SrxBayMzTiO3 gate dielectric includes a plurality of SrxBayMzTiO3 dielectric films. Each of the SrxBayMzTiO3 dielectric films has different ratio of x, y, and z. The fin is then oxidized to form a silicon oxide in between the SrxBayMzTiO3 gate dielectric and the fin. A dielectric layer is disposed on the SrxBayMzTiO3 gate dielectric. Subsequently a metal gate layer is deposited on the dielectric layer.
Claims20
A method of fabricating epitaxial gate dielectrics, comprising:
- forming a ferroelectric gate material on a fin;
- forming a silicon oxide between the ferroelectric gate material and the fin;
- and
- forming a metal gate layer on the ferroelectric gate material.
A method of forming epitaxial gate dielectrics comprising:
- forming a SrxBayMzTiO3 gate dielectric on a fin, wherein 0≦x, y and z≦1, x+y+z=1, x is not equal to y, and M is calcium or magnesium;
- oxidizing the fin;
- and
- forming a metal gate layer on the SrxBayMzTiO3 gate dielectric.
A method of forming epitaxial gate dielectrics, the method comprising:
- forming a fin on a semiconductor substrate;
- forming a ferroelectric gate material on the fin;
- oxidizing the fin to form a silicon oxide between the fin and the ferroelectric gate material;
- and
- forming a metal gate layer on the ferroelectric gate material.
Dependencies are inferred from the claim text.