Lateral double diffused MOS transistors
AssigneeSK hynix system ic Inc.
InventorSung Kun Park
Life of this patent
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Abstract
A lateral double diffused MOS transistor including a substrate, a source region and a drain region disposed in the substrate, a first contact and a second contact connected to the source region and the drain region, respectively, a gate insulation layer and a gate electrode on the substrate, a first field plate extending from the gate electrode toward the drain region, a coupling gate disposed between the second contact and the first field plate on the substrate, the coupling gate having a coupling voltage by coupling operation with the second contact, and a second field plate disposed between the coupling gate and the first field plate on the substrate, the second field plate being electrically connected to the second field plate.
Claims16
A lateral double diffused MOS transistor, comprising:
- a substrate;
- a source region and a drain region disposed in the substrate;
- a first contact and a second contact connected to the source region and the drain region, respectively;
- a gate insulation layer and a gate electrode on the substrate;
- a first field plate extending from the gate electrode toward the drain region;
- a coupling gate disposed between the second contact and the first field plate on the substrate;
- and
- a second field plate disposed between the coupling gate and the first field plate on the substrate, the second field plate being electrically connected to the coupling gate
- wherein the coupling gate is capacitively coupled with the second contact.
Dependencies are inferred from the claim text.