High-voltage semiconductor device and method of manufacturing the same

A high-voltage semiconductor device, comprising:

• a substrate comprising an isolation structure;
• a gate structure disposed on the substrate, wherein the gate structure is separated from the isolation structure by a distance;
• a source region and a drain region disposed in the substrate, and located at a side of the gate structure and a side of the isolation structure far from the gate structure, respectively;
• an insulating layer disposed on the gate structure, wherein the insulating layer extends onto a top surface of the substrate to completely cover the isolation structure;
• and
• a metal electrode disposed on the insulating layer, and extending to directly above the isolation structure, wherein a portion of the gate structure is covered by the metal electrode, and the source region and the drain region are electrically isolated from the metal electrode.

A method for forming a high-voltage semiconductor device, comprising:

• providing a substrate;
• forming an isolation structure in the substrate;
• forming a gate structure on the substrate, wherein the gate structure is separated from the isolation structure by a distance;
• forming a metal electrode on the gate structure, wherein the metal electrode extends from the gate structure to directly above the isolation structure;
• forming an insulating layer on the substrate and between the metal electrode and the gate structure, wherein the insulating layer extends onto a top surface of the substrate to completely cover the isolation structure;
• and
• forming the lowest metal layer of an interconnection structure, wherein the metal electrode is between the lowest metal layer and the gate structure.