Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a front electrode provided on a front surface of the semiconductor substrate;
• and
• a rear electrode provided on a rear surface of the semiconductor substrate,
• wherein
• the semiconductor device is configured to switch a conducting path between the front electrode and the rear electrode,
• the semiconductor substrate comprises:
• a first region of an n-type being in contact with the front electrode;
• a second region of a p-type being in contact with the front electrode and the first region;
• a third region of the n-type provided on a lower side of the second region and separated from the first region by the second region;
• a gate trench provided in the front surface and penetrating the first region and the second region so as to reach the third region;
• a fourth region of the p-type being in contact with a lower end of the gate trench;
• a termination trench provided in the front surface in a range outside the second region;
• a lower end p-type region of the p-type being in contact with a lower end of the termination trench;
• a lateral p-type region of the p-type being in contact with a lateral surface of the termination trench on an outer circumferential side, connected to the lower end p-type region, and exposed on the front surface;
• a plurality of guard ring regions of the p-type provided on the outer circumferential side with respect to the lateral p-type region and exposed on the front surface;
• an outer circumference n-type region of the n-type provided on the outer circumferential side with respect to the termination trench, connected to the third region, separating the lateral p-type region from the guard ring regions, and separating the guard ring regions from one another;
• a separation trench provided in the front surface of the semiconductor substrate between the second region and the termination trench;
• a fifth region of the p-type being in contact with a lower end of the separation trench;
• and
• a sixth region of the p-type provided between the termination trench and the separation trench, being in contact with a lateral surface of the termination trench on an inner circumference side, connected to the lower end p-type region, and exposed on the front surface of the semiconductor substrate,
• wherein the separation trench separates the second region from the sixth region.