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US 9,853,137 B2Granted
Method for forming a semiconductor device and a semiconductor device
AssigneeInfineon Technologies AG
InventorsMoriz Jelinek, Johannes Georg Laven, Helmut Oefner, Hans-Joachim Schulze, Werner Schustereder
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Abstract
A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.
Claims16
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor substrate having a carbon concentration within at least a part of the semiconductor substrate;
- determining a carbon-related parameter by performing a measurement indicating information on the carbon concentration within the at least a part of the semiconductor substrate;
- implanting a defined dose of protons into a semiconductor substrate;
- and
- tempering the semiconductor substrate according to a defined temperature profile
- wherein at least one of the defined dose of protons and the defined temperature profile is dependent upon the carbon-related parameter.
3 more elements
Dependencies are inferred from the claim text.