US 9,853,136 B2 · Directed epitaxial heterojunction bipolar transistor

Abstract

A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6° and 25°, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.

Claims22

Dependent claims

A directed epitaxial heterojunction bipolar transistor (HBT) structure, comprising:

a sub-collector layer formed by N-type group III-V semiconductors and stacked on a substrate, wherein the substrate is formed by GaAs that is formed by a (100) face towards a (111)B face with an angle of inclination between 1.1° and 14°;
a collector layer stacked on the sub-collector layer and formed by N-type group III-V semiconductors;
a base layer stacked on the collector layer and formed by P-type group III-V semiconductors;
an emitter layer stacked on the base layer and formed by N-type InGaP or InGaAsP;
an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors;
and
an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.

4 more elements

A directed epitaxial heterojunction bipolar transistor (HBT) structure, comprising:

a sub-collector layer formed by N-type group III-V semiconductors and stacked on a substrate, wherein the substrate is formed by GaAs that is formed by a (100) face towards a (111)B face with an angle of inclination between 1.1° and 14°;
a collector layer stacked on the sub-collector layer and formed by N-type group III-V semiconductors;
a tunnel collector layer stacked on the collector layer and formed by InGaP or InGaAsP, wherein the tunnel collector layer and the collector layer are different from each other in the set of materials;
a base layer stacked on the tunnel collector layer and formed by P-type group III-V semiconductors;
an emitter layer stacked on the base layer and formed by N-type group III-V semiconductors having a bandgap larger than a bandgap of the base layer;
an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors;
and
an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.

5 more elements

A directed epitaxial heterojunction bipolar transistor (HBT) structure, comprising:

an intermediate composite layer formed by semiconductors and stacked on a substrate, wherein the substrate is formed by GaAs that is formed by a (100) face towards a (111)B face with an angle of inclination between 1.1° and 14°;
a sub-collector layer formed by N-type group III-V semiconductors and stacked on the intermediate composite layer;
a collector layer stacked on the sub-collector layer and formed by N-type group III-V semiconductors;
a base layer stacked on the collector layer and formed by P-type group III-V semiconductors;
an emitter layer stacked on the base layer and formed by N-type InGaP or InGaAsP;
an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors;
and
an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.

5 more elements

A directed epitaxial heterojunction bipolar transistor (HBT) structure, comprising:

an intermediate composite layer formed by semiconductors and stacked on a substrate, wherein the substrate is formed by GaAs that is formed by a (100) face towards a (111)B face with an angle of inclination between 1.1° and 14°;
a sub-collector layer formed by N-type group III-V semiconductors and stacked on the intermediate composite layer;
a collector layer stacked on the sub-collector layer and formed by N-type group III-V semiconductors;
a tunnel collector layer stacked on the collector layer and formed by InGaP or InGaAsP, wherein the tunnel collector layer and the collector layer are different from each other in the set of materials;
a base layer stacked on the tunnel collector layer and formed by P-type group III-V semiconductors;
an emitter layer stacked on the base layer and formed by N-type group III-V semiconductors having a bandgap larger than a bandgap of the base layer;
an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors;
and
an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductor.

6 more elements

Dependencies are inferred from the claim text.

Directed epitaxial heterojunction bipolar transistor

Life of this patent

Directed epitaxial heterojunction bipolar transistor

Life of this patent

Abstract

Claims22