Method of manufacturing high resistivity silicon-on-insulator substrate

A method of forming a multilayer structure, the method comprising:

• forming an interfacial layer on a front surface of a semiconductor handle substrate, wherein the semiconductor handle substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor handle substrate and the other of which is a back surface of the semiconductor handle substrate, a circumferential edge joining the front and back surfaces of the semiconductor handle substrate, and a bulk region between the front and back surfaces of the semiconductor handle substrate, wherein the semiconductor handle substrate has a bulk region resistivity between 2000 Ohm-cm and about 100,000 Ohm-cm and the interfacial layer has a thickness between about 1 nanometer and about 5 nanometers and further wherein the interfacial layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride;
• forming a carbon-doped amorphous silicon layer on the interfacial layer on the front surface of the semiconductor handle substrate, wherein the carbon-doped amorphous silicon layer has an average thickness of between about 25 nanometers and about 7500 nanometers and further wherein the carbon-doped amorphous silicon layer comprises a carbon concentration between about 1% and 10% on an atomic basis;
• and
• bonding a dielectric layer on a front surface of a semiconductor donor substrate to the carbon-doped amorphous silicon layer to thereby form a bonded structure, wherein the semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, and a central plane between the front and back surfaces of the semiconductor donor substrate.