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US 9,853,129 B2Granted
Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth
AssigneeApplied Materials, Inc.
InventorsMatthias Bauer, Hans-Joachim Ludwig Gossmann, Benjamin Colombeau
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Abstract
A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.
Claims14
A method of forming a semiconductor device on a semiconductor substrate, the method comprising:
- performing an anisotropic etch process on a semiconductor material to expose a surface in the semiconductor material, wherein the exposed surface is disposed between an existing structure of the semiconductor device and a bulk semiconductor portion of the semiconductor substrate on which the semiconductor material is formed;
- performing an isotropic etch process on an exposed sidewall to form a cavity in the semiconductor material that is disposed between the existing structure and the bulk semiconductor portion of the semiconductor substrate;
- and
- forming a layer of deposited material via a selective epitaxial growth (SEG) process on a surface of the cavity, wherein the deposited material includes silicon and an n-type dopant.
1 more element
Dependencies are inferred from the claim text.