Semiconductor structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsKuo-Chin Hung, Wei-Chuan Tsai, Kuan-Chun Lin
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Abstract
A semiconductor structure includes a substrate having thereon a dielectric layer. An opening is formed in the dielectric layer. The opening includes a bottom surface and a sidewall surface. A diffusion barrier layer is conformally disposed along the sidewall surface and the bottom surface of the opening. A nucleation metal layer is conformally disposed on the diffusion barrier layer. A bulk metal layer is disposed on the nucleation metal layer. A film-growth retarding layer is disposed between the nucleation metal layer and the bulk metal layer.
Claims28
A semiconductor structure, comprising:
- a substrate having thereon a dielectric layer;
- an opening in the dielectric layer, wherein the opening comprises a bottom surface and a sidewall surface;
- a diffusion barrier layer conformally disposed along the sidewall surface and the bottom surface of the opening;
- a nucleation metal layer conformally disposed on the diffusion barrier layer;
- a bulk metal layer directly on the nucleation metal layer and filling up the opening;
- and
- a film-growth retarding layer covering only an upper portion of the nucleation metal layer and sandwiched between the nucleation metal layer and the bulk metal layer within the opening.
A method for fabricating a semiconductor structure, comprising:
- providing a substrate having thereon a dielectric layer;
- forming an opening in the dielectric layer, wherein the opening comprises a bottom surface and a sidewall surface;
- conformally depositing a diffusion barrier layer along the sidewall surface and the bottom surface of the opening;
- conformally depositing a nucleation metal layer on the diffusion barrier layer;
- forming a film-growth retarding layer covering only an upper portion of the nucleation metal layer within the opening;
- and
- depositing a bulk metal layer directly on the nucleation metal layer and the film-growth retarding layer in different deposition rate until filling up the opening.
Dependencies are inferred from the claim text.