Selective epitaxially grown III-V materials based devices

A III-V material based device, comprising:

• a first III-V material based buffer layer on a silicon substrate;
• a second III-V material based buffer layer on the first III-V material based buffer layer, the second III-V material including AlAsSb;
• and
• a III-V material based device channel layer on the second III-V material based buffer layer, the III-V material based device channel layer including InGaAs;
• wherein the first III-V material based buffer layer includes GaAsSb and directly contacts the second III-V material based buffer layer.

A method to manufacture a III-V material based device, comprising:

• forming a trench in an insulating layer on a silicon substrate;
• depositing a first III-V material based buffer layer on the silicon substrate and in the trench;
• depositing a second III-V material based buffer layer onto the first III-V material based buffer layer and in the trench, the second III-V material including aluminum;
• and
• depositing a III-V material based device channel layer on the second III-V material based buffer layer.

A III-V material based device, comprising:

• a first III-V material based buffer layer on a silicon substrate;
• a second III-V material based buffer layer on the first III-V material based buffer layer, the second III-V material including aluminum;
• and
• a III-V material based device channel layer on the second III-V material based buffer layer;
• wherein the first and second III-V material based buffer layers and the III-V material based device channel layer are all included in a trench.