Semiconductor device and method of formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Yu Lin, Shih-Yen Lin, Si-Chen Lee
Life of this patent
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Abstract
A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first source/drain region over the substrate;
- a second source/drain region over the substrate;
- a graphene channel between the first source/drain region and the second source/drain region;
- and
- a gate, wherein:
- a first surface of the first source/drain region interfaces with the graphene channel,
- a second surface of the first source/drain region faces the gate, the second surface of the first source/drain region opposite the first surface of the first source/drain region, and
- a third surface of the first source/drain region faces the gate.
A semiconductor device, comprising:
- a substrate;
- a first source/drain region over the substrate;
- a second source/drain region over the substrate;
- a graphene channel between the first source/drain region and the second source/drain region;
- and
- a gate, wherein:
- a first surface of the first source/drain region interfaces with the graphene channel,
- a second surface of the first source/drain region faces the gate, the second surface of the first source/drain region opposite the first surface of the first source/drain region, and
- the gate extends around the first source/drain region from a first side of the graphene channel to a second side of the graphene channel opposite the first side.
A semiconductor device, comprising:
- a substrate;
- a first source/drain region over the substrate;
- a second source/drain region over the substrate;
- a graphene channel between the first source/drain region and the second source/drain region;
- and
- a gate, wherein:
- a first surface of the first source/drain region interfaces with the graphene channel,
- a second surface of the first source/drain region faces the gate, the second surface of the first source/drain region opposite the first surface of the first source/drain region, and
- a top surface of the first source/drain region, a top surface of the graphene channel, and a top surface of the gate are co-planar.
Dependencies are inferred from the claim text.