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US 9,853,089 B2Granted
Semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist, Israel Beinglass, Zeev Wurman
Life of this patent
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Abstract
A semiconductor device, including: a first memory cell including a first transistor; a second memory cell including a second transistor, where the second transistor overlays the first transistor and the second transistor self-aligned to the first transistor; and a plurality of junctionless transistors, where at least one of the junctionless transistors controls access to at least one of the memory cells.
Claims20
A semiconductor device, comprising:
- a first memory cell comprising a first transistor;
- a second memory cell comprising a second transistor,
- wherein said second transistor overlays said first transistor and said second transistor is self-aligned to said first transistor;
- and
- a plurality of junctionless transistors,
- wherein at least one of said junctionless transistors controls access to at least one of said memory cells.
3 more elements
A semiconductor device, comprising:
- an electrically controlled resistive structure;
- a first memory cell comprising a first transistor;
- and
- a second memory cell comprising a second transistor,
- wherein said second transistor overlays said first transistor and said second transistor is self-aligned to said first transistor, and
- wherein said electrically controlled resistive structure could be set to conduct a signal to said first transistor.
3 more elements
A semiconductor device, comprising:
- a first memory cell comprising a first transistor;
- and
- a second memory cell comprising a second transistor,
- wherein said second transistor overlays said first transistor and said second transistor is self-aligned to said first transistor, and
- wherein said first transistor comprises a silicided source and drain.
2 more elements
Dependencies are inferred from the claim text.