Method of manufacturing a semiconductor device

A method of manufacturing an image sensor device comprising:

• in a first manufacturing facility:
• forming a first TFT device layer on a glass substrate;
• forming a first metal layer over the TFT device layer;
• forming an electrical and mechanical protection layer over the first metal layer;
• in a second manufacturing facility:
• removing the electrical and mechanical protection layer;
• forming an interconnect metal layer coupled to the first metal layer;
• forming a photosensor layer and a second TFT layer coupled to the interconnect metal layer;
• forming a second metal layer coupled to the photosensor layer and the second TFT layer;
• and
• forming a passivation layer over the second metal layer,
• wherein the first TFT layer forms peripheral circuitry.

A method of manufacturing an image sensor device comprising:

• in a first manufacturing facility:
• forming a first set of patterned silicon, metal, and insulating layers on a glass substrate;
• forming an electrical and mechanical protection layer over the first set of patterned silicon, metal, and insulating layers;
• in a second manufacturing facility:
• removing the electrical and mechanical protection layer;
• forming a second set of patterned silicon, metal, and insulating layers over the first set of patterned silicon, metal, and insulating layers;
• forming a plurality of photosensors in communication with at least the second set of patterned silicon, metal, and insulating layers to form an unpassivated image sensor device;
• and
• forming a passivation layer over the unpassivated image sensor device,
• wherein at least one of the plurality of photosensors comprises a p-n junction or photosensitive material.