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US 9,853,082 B2Granted
Color filter array and micro-lens structure for imaging system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Ying Chen, Dun-Nian Yaung, Chen-Jong Wang, Tzu-Hsuan Hsu
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Abstract
A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a convex micro-lens structure above a top surface of the color filters.
Claims20
A method of forming a semiconductor imaging system, comprising:
- patterning a photodetector array on a semiconductor substrate;
- patterning a color filter array over the photodetector array;
- wherein the color filter array, after being patterned, has spaces between neighboring color filter elements of the color filter array;
- applying a micro-lens material to the patterned color filter array;
- wherein the micro-lens material fills the spaces between neighboring color filter elements to establish sidewall waveguide structures and also covers upper surfaces of the color filter elements to establish convex micro-lens structures;
- forming an anti-reflecting layer over an uneven top surface of the micro-lens material to provide for a planar upper surface;
- forming a micro-lens template over the anti-reflecting layer, the micro-lens template having a predetermined surface curvature corresponding to a desired surface curvature for a convex micro-lens structure;
- and
- with the micro-lens template in place, etching back the anti-reflecting layer and the micro-lens material to form the convex micro-lens structure having the desired surface curvature;
- wherein the anti-reflecting layer is formed over the uneven top surface of the micro-lens material prior to forming the micro-lens template;
- wherein an upper surface of the convex micro-lens structures has a minimum height at a position that that reaches the sidewall waveguide structures and is coplanar with upper surfaces of the color filter elements as measured from an upper surface of the semiconductor substrate.
8 more elements
A method of forming a semiconductor imaging system, comprising:
- forming a photodetector array within a substrate;
- forming a color filter array overlying the photodetector array, the color filter array including a plurality of color filter elements having spaces between one another;
- forming a micro-lens material to fill the spaces between neighboring color filter elements to establish sidewall waveguide structures and to extend over upper surfaces of the color filter elements;
- forming an anti-reflecting layer over an uneven top surface of the micro-lens material to fill gaps of the micro-lens material between the color filter elements and to provide for a planar upper surface;
- forming a micro-lens template over the anti-reflecting layer;
- and
- etching back the anti-reflecting layer and the micro-lens material to form a convex micro-lens structure overlying the color filter elements;
- wherein an upper surface of the convex micro-lens structure has a minimum height at a position that reaches the sidewall waveguide structures and is coplanar with upper surfaces of the color filter elements as measured from bottom surfaces of the color filter elements.
5 more elements
A method of forming a semiconductor imaging system, comprising:
- forming a p-n junction photodetector array within a semiconductor substrate;
- forming a color filter array overlying the photodetector array, the color filter array including a plurality of color filter elements spaced apart one from another;
- forming a micro-lens material to fill spaces between neighboring color filter elements and to extend over upper surfaces of the color filter elements;
- forming an anti-reflecting layer over an uneven top surface of the micro-lens material, the anti-reflecting layer having a planar upper surface;
- forming a micro-lens template over the anti-reflecting layer, the micro-lens template having a predetermined convex surface curvature;
- and
- etching back the anti-reflecting layer and the micro-lens material to form a convex micro-lens structure overlying the color filter elements;
- wherein an upper surface of the convex micro-lens structure has a minimum height at a position that reaches sidewall waveguide structures and is coplanar with upper surfaces of the color filter elements as measured from an upper surface of the semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.