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US 9,853,077 B2Granted
Solid-state imaging device and electronic apparatus
AssigneeSony Corporation
InventorHiromi Okazaki
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.
Claims30
An imaging device, comprising:
- a semiconductor substrate;
- a trench region including a first trench, a second trench, and a third trench each disposed in the semiconductor substrate in a cross-section view, wherein the first trench, the second trench, and the third trench are arranged in this order in a first direction in the cross-section view,
- a first light-receiving region disposed between the first trench and the second trench, wherein the first light-receiving region is surrounded by the trench region in a plan view;
- and
- a second light-receiving region disposed between the second trench and the third trench, wherein the second light-receiving region is surround by the trench region in the plan view,
- wherein a first distance between a center of the first trench and a center of the second trench is different than a second distance between the center of the second trench and a center of the third trench, and
- wherein the first distance and the second distance each extend in the first direction.
4 more elements
An imaging device, comprising:
- a semiconductor substrate having a first side as a light-receiving side;
- a trench region disposed in the semiconductor substrate at the first side;
- a first color filter corresponding to a first color disposed at the first side of the semiconductor substrate,
- a second color filter corresponding to a second color disposed at the first side of the semiconductor substrate,
- a first region of the semiconductor substrate comprising at least a portion of a first photodiode, wherein the first region is surrounded by the trench region at the first side in a plan view and aligned with the first color filter in a depth direction of the semiconductor substrate;
- a second region of the semiconductor substrate comprising at least a portion of a second photodiode, wherein the second region is surrounded by the trench region at the first side in the plan view and aligned with the second color filter in the depth direction of the semiconductor substrate;
- wherein a first area of the first region in a plan view at the first side is larger than a second area of the second region in the plan view at the first side, and
- wherein the first color filter filters light of a different wavelength range than the second color filter.
5 more elements
Dependencies are inferred from the claim text.