Solid-state imaging element and manufacturing method for solid-state imaging element

A solid-state imaging element, comprising:

• a substrate including a semiconductor of a first conductive type;
• a gate insulating film on a top surface of the substrate;
• a gate electrode on the gate insulating film;
• a side wall on a side surface of the gate electrode;
• a charge storage region including a semiconductor of a second conductive type different from the first conductive type inside the substrate and apart from the top surface of the substrate;
• a read region including the second conductive type semiconductor inside the substrate and on an opposite side to the charge storage region with the gate electrode interposed therebetween;
• a channel region including the first conductive type semiconductor inside the substrate and immediately below the gate electrode;
• a shield region including the first conductive type semiconductor inside the substrate and between the top surface of the substrate and the charge storage region;
• and
• an intermediate region including the first conductive type semiconductor inside the substrate and between the top surface of the substrate and the charge storage region, wherein
• the charge storage region extends to immediately below the gate electrode inside the substrate and is in contact with a lower end of the channel region,
• the intermediate region is inside the substrate and between the channel region and the shield region and is immediately below the side wall, and is in contact with each of the channel region and the shield region, and a concentration of impurities of the first conductive type in the intermediate region is lower than a concentration of the impurities of the first conductive type in the shield region,
• the channel region includes a first channel region that is in contact with the charge storage region, and a second channel region that is in contact with the read region and the first channel region, and
• the second channel region includes a portion protruding toward the charge storage region with respect to an end of the first channel region on a side of the read region, an upper surface of the portion is directly in contact with a lower surface of the first channel region, and the portion and the charge storage region are separate from each other.