Silicon photoelectric multiplier with very low optical cross-talk and fast readout
AssigneeMax-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V.
InventorsRazmik Mirzoyan, Masahiro Teshima, Elena Popova
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Abstract
The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.
Claims12
A silicon-based photoelectric multiplier device, comprising:
- a substrate;
- a first layer of a first conductivity type;
- a plurality of photosensitive cells, wherein:
- each photosensitive cell of the plurality of photosensitive cells comprises a second layer of a second conductivity type formed on a main upper surface of the first layer remote from the substrate,
- the first layer and the second layer form a p-n junction, and
- the first layer and the second layer are disposed on or above the substrate;
- and
- a material layer disposed between a main upper surface of the substrate and a main lower surface of the first layer, wherein:
- the material layer is made of a material different from a material of the substrate, and
- the material of the material layer comprises one or more of a metal, a metal compound, or a metal alloy.
Dependencies are inferred from the claim text.