Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Zuoguang Liu, Xin Miao
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Abstract
A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.
Claims18
A semiconductor structure comprising:
- a substrate;
- a strained silicon germanium layer disposed on the substrate, wherein the strained silicon germanium layer is free of edge strain relaxation;
- at least one active area defined within a portion of the strained silicon germanium layer;
- a gate stack disposed on and in contact with the strained silicon germanium layer;
- a first oxide region within and formed from the strained silicon germanium layer;
- and
- a second oxide region within and formed from the strained silicon germanium layer, where the portion of the strained silicon germanium layer is situated between and contacts the first and second oxide regions, wherein the first and second oxide regions isolate the at least one active area.
An integrated circuit comprising:
- a semiconductor structure, the semiconductor structure comprising
- a substrate;
- a strained silicon germanium layer formed on the substrate, wherein the strained silicon germanium layer is free of edge strain relaxation;
- at least one active area defined within a portion of the strained silicon germanium layer;
- a gate stack disposed on and in contact with the strained silicon germanium layer;
- a first oxide region within and formed from the strained silicon germanium layer;
- and
- a second oxide region within and formed from the strained silicon germanium layer, where the portion of the strained silicon germanium layer is situated between and contacts the first and second oxide regions, wherein the first and second oxide regions isolate the at least one active area.
Dependencies are inferred from the claim text.