Semiconductor device and method for manufacturing same

A semiconductor device, comprising:

• a substrate:
• a first stacked portion provided above the substrate, the first stacked portion including a plurality of electrode layers stacked with an insulator interposed,
• a semiconductor body extending through the first stacked portion in a stacking direction of the first stacked portion;
• a charge storage portion provided between the semiconductor body and one of the electrode layers;
• a circuit portion including a transistor provided at a region separated from the first stacked portion in the substrate;
• a second stacked portion provided above the circuit portion, the second stacked portion including a plurality of first layers and a plurality of second layers, the first layers and the second layers including a first layer and a second layer stacked alternately;
• and
• an insulating layer provided above the circuit portion and provided above the substrate between the first stacked portion and the second stacked portion;
• a height of an uppermost first layer of the second stacked portion from a surface of the substrate being substantially equal to a height of an uppermost electrode layer of the first stacked portion from the surface of the substrate, or being higher than the height of the uppermost electrode layer;
• wherein a height of a lowermost electrode layer of the first stacked portion from the surface of the substrate is lower than a height of a lowermost first layer of the second stacked portion from the surface of the substrate.