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US 9,853,047 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorKang Sik Choi
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device. The semiconductor device includes a source layer, a well pickup layer formed on the source layer, a body structure formed on the well pickup layer and including a well region contacting the well pickup layer and first junctions formed on side walls of the body structure, channel pillars contacting the body structure and protruding from the body structure, and contact layers formed on the side walls of the body structure and electrically connecting the body structure and the well pickup layer.
Claims20
A semiconductor device comprising:
- a source layer;
- a well pickup layer formed on the source layer and electrically coupled to the source layer;
- a body structure formed on the well pickup layer, and including a well region contacting the well pickup layer and first junctions including impurities and formed on side walls of the body structure;
- channel pillars contacting the body structure and protruding from the body structure;
- and
- contact layers formed on the side walls of the body structure, and electrically connecting the body structure and the well pickup layer.
3 more elements
A semiconductor device comprising:
- a source layer;
- a well pickup layer formed on the source layer;
- a body structure formed on the well pickup layer, and including a well region contacting the well pickup layer and first junctions formed on side walls of the body structure;
- a stacked structure formed on the body structure;
- channel pillars passing through the stacked structure, and contacting the body structure;
- and
- contact layers formed on the side walls of the body structure, and electrically connecting the first junctions and the well pickup layer.
4 more elements
Dependencies are inferred from the claim text.