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US 9,853,046 B2Granted
Apparatuses and methods for forming multiple decks of memory cells
AssigneeMicron Technology, Inc.
InventorsZhenyu Lu, Roger W. Lindsay, Akira Goda, John Hopkins
Life of this patent
Estimating the term…
Abstract
Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck having alternating conductor materials and dielectric materials and a hole containing materials extending through the conductor materials and the dielectric materials. The methods can also include forming a sacrificial material in an enlarged portion of the hole and forming a second deck of memory cells over the first deck. Additional apparatuses and methods are described.
Claims11
An apparatus comprising:
- a first deck including alternating first conductor materials and first dielectric materials;
- a second deck over the first deck, the second deck including alternating second conductor materials and second dielectric materials;
- and
- a hole containing materials extending through the first conductor materials and the first dielectric materials and through the second conductor materials and the second dielectric materials, the hole including a first portion in the first deck, a second portion in the second deck, and a third portion between the first and second portions, wherein a diameter of the third portion of the hole is greater than a diameter of each of the first and second portions of the hole.
1 more element
An apparatus comprising:
- a first deck including alternating first conductor materials and first dielectric materials, the first conductor materials including first levels of conductor materials having a first conductivity type, and second levels of conductor materials having a second conductivity type;
- a second deck over the first deck, the second deck including alternating second conductor materials and second dielectric materials, the second conductor materials including third levels of conductor materials having the first conductivity type, wherein the second levels of conductor materials are between the first levels of conductor materials and the third levels of conductor materials;
- and
- a hole containing materials extending through the first conductor materials and the first dielectric materials and through the second conductor materials and the second dielectric materials.
1 more element
Dependencies are inferred from the claim text.