Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• forming an interlayer insulating layer on a substrate;
• forming a sacrificial layer on the interlayer insulating layer;
• forming a through-hole penetrating the interlayer insulating layer and the sacrificial layer;
• oxidizing a first portion of the sacrificial layer including a side surface exposed by the through-hole;
• forming a channel pattern in the through-hole;
• removing a second portion of the sacrificial layer which is not oxidized;
• and
• forming a gate pattern in a space which is formed by removing the second portion of the sacrificial layer.

A method of fabricating a semiconductor device, the method comprising:

• alternately stacking a plurality of interlayer insulating layers and sacrificial layers on a substrate;
• forming a through-hole vertically passing through the interlayer insulating layers and the sacrificial layers;
• forming a protective pattern containing oxidized silicon on an inner wall of the through-hole;
• forming a channel pattern on the protective pattern;
• forming interlayer spaces by removing the sacrificial layers;
• and
• forming gate electrodes in the interlayer spaces,
• wherein the protective pattern includes first portions disposed on the sacraficial layers, and second portions between the first portions, a horizontal width of the second portion is thinner than that of the first portions.