Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a stacked structure including alternately stacked conductive patterns and interlayer insulating patterns;
• a through-hole passing through the stacked structure;
• a channel pattern formed in the through-hole and protruding from an inside of the through hole over the through-hole;
• and
• a capping conductive pattern having a first surface being in contact with a second surface of the protruded channel pattern and formed to have a width greater than the through-hole,
• wherein the first surface and the second surface are parallel to a direction in which the conductive patterns and the interlayer insulating patterns are stacked, and
• wherein the protruded channel pattern extends to pass through an upper surface and a bottom surface of the capping conductive pattern.